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CHR2294
RoHS COMPLIANT
25-35GHz Single Side Band Mixer Self biased
GaAs Monolithic Microwave IC Description
The CHR2294 is a multifunction chip (MFC) which integrates a self biased LO buffer amplifier and a sub-harmonically balanced diodes mixer for 2LO suppression and image rejection. It is usable for both up-conversion and down-conversion. It is designed for a wide range of applications, typically commercial communication systems for broadband local access. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
Up-conversion Supradyne mode IF = 1.2GHz 4V / 60mA
Main Features * Broadband performances : 25-35GHz * 11dB conversion Loss * 15dBc image rejection * +9dBm LO input power * +2.5dBm input power (1dB gain comp.) * Low DC power consumption, 55mA@4V * Chip size : 2.06 x 1.25 x 0.10 mm Main Characteristics
Tamb. = 25C Parameter
FRF FLO FIF Lc RF frequency range LO frequency range IF frequency range Conversion Loss
30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 23 24 25 26 27 28 29 30 31 32 33 34 35 36 RF Frequency (GHz) CL sup (dB) P LO@ RF (dBm) Img Supp (dBc) P 2xLO@ RF (dBm)
Min
25 11 DC
Typ
Max
35 19 3
Unit
GHz GHz GHz dB
11
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHR22946180 - 29 jun 06 1/6 Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHR2294
Tamb = +25C Symbol
FRF FLO FIF Lc PLO
25-35GHz SSB Mixer
Electrical Characteristics for Broadband Operation
Parameter
RF frequency range LO frequency range IF frequency range Conversion Loss LO Input power
Min
25 11 DC
Typ
Max
35 19 3
Unit
GHz GHz GHz dB dBm dBm dBc dBm
11 +9 -35 15 +2.5 2.0:1 2.0:1 2.0:1 4 55
2xLO Leak 2xLO Leakage (for PLO=+5dBm) Img Rej P1dB LO Match RF Match IF Match Vd Id Image Rejection (1) Input power at 1dB gain compression LO VSWR RF VSWR IF VSWR Drain bias voltage Bias current
V mA
(1) With external quadrature hybrid coupler (reference on request). The minimal value depends on the quality of the external quadrature combiner. A bonding wire of typically 0.1 to 0.15 nH will improve the accesses matching.
Absolute Maximum Ratings
Tamb. = 25C (1) Symbol
Vd Id Tj Ta Tstg Drain bias voltage Drain bias current Junction temperature Operating temperature range (chip backside) Storage temperature range
Parameter
Values
4.25 75 175 -40 to +85 -55 to +125
Unit
V mA C C C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
Ref. : DSCHR22946180 - 29 jun 06 2/6 Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHR2294
Typical On-wafer Measurements
Bias Conditions : Vd= 4 V, Id= 55mA
25-35GHz SSB Mixer
Conversion gain, Image suppression & LO rejection with a 90 IQ combiner UP Conversion- Supradyne mode- IF =1.2GHz
30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 23 24 25 26 27 28 29 30 31 32 33 34 35 36 RF Frequency (GHz)
CL sup (dB) P LO@ RF (dBm)
Img Supp (dBc) P 2xLO@ RF (dBm)
UP Conversion- Infradyne mode- IF =1.2GHz
30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 22 23 24 25 26 27 28 29 30 31 32 33 34 35 RF Frequency (GHz)
Ref. : DSCHR22946180 - 29 jun 06 3/6 Specifications subject to change without notice
CL sup (dB) P LO@ RF (dBm)
Img Supp (dBc) P 2xLO@ RF (dBm)
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHR2294
25-35GHz SSB Mixer
UP Conversion- Supradyne mode- IF =1.2GHz Gain compression versus60mA IF = 1.2GHz 4V / IF input power
0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 -11 -12 -13 -14 -15 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6
IF Input power (dBm)
F LO=12GHz
F LO=14GHz
F LO=16GHz
Ref. : DSCHR22946180 - 29 jun 06
4/6
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHR2294
Chip Assembly and Mechanical Data
25-35GHz SSB Mixer
Bonding pad positions
(Chip thickness: 100m)
To VD DC Drain Supply
10nF
120pF
Note : Supply feed should be capacitively bypassed. 25m diameter gold wire is recommended
Ref. : DSCHR22946180 - 29 jun 06 5/6 Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
25-35GHz SSB Mixer
CHR2294
Ordering Information
Chip form : CHR2294-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. : DSCHR22946180 - 29 jun 06
6/6
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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